The isolated disordered regions and the amorphous layer have widely different anneal behavior. In the case of germanium and silicon, the isolated disordered regions anneal at moderate temperatures of approximately 200° and 300° C, respectively. The amorphous layers also anneal in a characteristic fashion, but at appreciably higher temperatures, i.e., at approximately 600° C in silicon and 400° C in germanium.
1970, James W[alter] Mayer, Lennart Eriksson, John A[rthur] Davies, “General Features of Ion Implantation”, in Ion Implantation in Semiconductors: Silicon and Germanium, New York, N.Y.: Academic Press, page 5